Ohmiccontacts相关论文
台面铟镓砷(InGaAs)探测器制备工艺包括n型InP欧姆接触和较好可靠性的延伸电极。采用Cr/Au作为n型InP欧姆接触, 通过传输线模型和......
A1GaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and......